Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...
Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of ...
The VOW3120-X017T’s low current consumption of 2.5 mA makes it a practical choice in power design applications where high efficiency operation is required. The VOW3120-X017T boasts typical delays of ...
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