A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...

We report on a significant pFET external resistance reduction (~40%) and corresponding 10% RON decrease by nanosecond laser annealing of S/D structures applicable to advanced technology nodes.

ROHM offers a wide lineup of general-purpose 3-pin regulators featuring low power consumption, high current capability, and high voltage resistance. ROHM’s LDO’s are ideal for mobile phones, ...

Vishay Intertechnology, Inc. introduced three new ±15V precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the Vishay Siliconix DG1411, DG1412, ...