Nanowerk

Holes in silicon are heavier than expected - solving a mystery in quantum electronics

Physicists found why holes move slower than electrons in silicon: not defects, but higher intrinsic mass, supporting ...
EDN

Sony develops 2-layer transistor pixel technology for CMOS image sensors

Sony Semiconductor Solutions Corp. has claimed the first stacked CMOS image sensor technology with a 2-layer transistor pixel. The company’s proprietary technology separates photodiodes and pixel ...
Electronic Design

Could This “2D” Transistor Process Transform Logic and Power Device Production?

The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
WRIC

Silicon Genesis Broadens the Use of Layer Transfer Methods for Advanced CMOS Image Sensor Stacks

Figure1: Cross-section-TEM image of an active photodiode (PD) layer transferred to a model signal transfer device (labeled here as a "mount" device). Image taken before subsequent removal of cleave ...
NextBigFuture

SemiQon Cryogenic Transistor Breakthrough for 1,000X Less Heat and Uses 99.9% Less Power

Finnish company Semiqon has developed a transistor that operates with virtually zero heat dissipation. They have made silicon-based quantum processors to make future quantum computers more affordable, ...
Electronic Design

Dirt Cheap ASIC Design for Dummies (Part 3): NMOS, PMOS Silicon Design Using a Web Browser

Quickly learn what the difference is between PMOS and NMOS transistors in their structure and operation, and how CMOS works with the two in combination. Siliwiz, a free, browser-based, ASIC layout ...
Science Daily

GaN-on-Silicon for scalable high electron mobility transistors

Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
EurekAlert!

Pinned-surface and double-junction photodiode type super high-performance image sensor with built-in solar cell structure

Single junction type (a) and the proposed double junction type (b) solar cells are compared with the conventional TANDEM type (c) and the proposed face-to-face type (d) multi-junction connections. A ...
Science Daily

Atom-thin tech replaces silicon in the world’s first 2D computer

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using molybdenum ...