Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
Today Samsung announced it has begun mass production of the “industry’s thinnest” 12 nanometer (nm)-class, 12-gigabyte (GB) and 16GB LPDDR5X DRAM packages. This development is expected to solidify the ...
From the deluge of fine papers at the International Electron Devices Meeting last week it is possible to see the outlines of a broad movement within the design community: development to provide the ...
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