(Nanowerk News) Bulk FinFETs are key devices for advanced technology node applications such as analog circuits and SRAMs because of a very good short channel effect control and transistor compactness.

WILSONVILLE, Ore.--(BUSINESS WIRE)-- Mentor Graphics Corp. (NAS: MENT) today announced that it has completed enhancements to its digital tool set for TSMC's 16nm FinFET manufacturing processes. TSMC's ...

PITTSBURGH, Sept. 26, 2013 /PRNewswire/ -- ANSYS subsidiary Apache Design announced today that its RedHawk(TM) and Totem(TM) products have completed methodology innovations to be included in TSMC's ...

Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced delivery of a comprehensive design ...

New reference flow offers open, efficient radio frequency design solution that supports streamlined migration from previous process nodes Industry-leading electromagnetic simulation tools boost 5G/6G ...

The semiconductor industry faces a major change in the way that ICs are made in order to keep improving performance and density, a change that has potential ramifications for design methodologies.

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

New reference flow offers open, efficient radio frequency design solution using TSMC N4PRF process Industry-leading electromagnetic simulation tools boost WiFi-7 system performance and power ...