EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
Saelig Company, Inc. announces the availability of the CLIPPER CLP1500V15A1 - a new, high technology oscilloscope adapter that allows small voltages to be measured in the presence of very high ...
Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
Irvine, Calif.—Microsemi Corp. recently developed a high speed IGBT transistor line for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power ...
GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150 device delivers 100 times lower ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
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