“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...

Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...

The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...

Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...

Magnetic random-access memory, or MRAM, uses magnetic rather than electrical charges to store data bits. While this prototype memory has so far existed only in the laboratories of IBM Corp., the ...

Scientists have created novel ‘spintronic’ devices that could point the way for the next generation of more powerful and permanent data storage chips in computers. Physicist at the Universities of ...

This collection supports and amplifies research related to SDG 9 - Industry, innovation and infrastructure. Recent advances in understanding and manipulating spin, orbital, and charge currents via ...