Machine learning (ML), a subset of artificial intelligence (AI), has become integral to our lives. It allows us to learn and reason from data using techniques such as deep neural network algorithms.

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

Measurement results of the array of three-terminal-based electrochemical memory devices, demonstrating excellent characteristics in both cycle and device-to-device scatter, well above the requirements ...

For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...

Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...

A new technical paper titled “Embedding security into ferroelectric FET array via in situ memory operation” was published by researchers at Pennsylvania State University, University of Notre Dame, ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

In a development for artificial intelligence, researchers have unveiled a 28×28 synaptic device array that promises to revolutionize artificial visual systems. This innovative array, measuring a ...