The use of finFETs and multi-patterning has a huge impact on the entire physical implementation flow. This paper outlines the new challenges in placement, routing, optimization, and physical ...

A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...

Altera and Intel are working together on the development of multi-die devices which integrate 14nm Stratix 10 FPGAs with memory, processors and analogue components in a single package. The ...

DesignWare PHY IP Cuts Power and Area by More Than 35 Percent for High-Performance Computing Applications Including Machine Learning and Artificial Intelligence MOUNTAIN VIEW, Calif., May. 22, 2017 – ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

Hsinchu, Taiwan and Cambridge, UK, March. 15, 2016 – ARM and TSMC announced a multi-year agreement to collaborate on a 7nm FinFET process technology which includes a design solution for future ...

SEOUL, South Korea & SANTA CLARA, Calif.--(BUSINESS WIRE)--Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer ...

ARM has announced a multicore test chip featuring the 64bit ARM v8-A processor. Validation of the test chip – which was manufactured on TSMC’s 10FinFET process and taped out in Q4 2015 – is said to be ...

Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer (nm) FinFET process technology. For the first time, the ...

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