Rohm has introduced a 1,200V 300A all-silicon carbide half-bridge power module, with reduced inductance compared with its first devices – claimed stray inductance is 13nH. Rohm began mass production ...
Isao Matsumoto, President and CEO of ROHM Co., Ltd. (right) and Tsuguru Ariyama, Director of Power Discrete Business Unit (left) Isao Matsumoto, President and CEO of ROHM Co., Ltd. (right) and Tsuguru ...
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...
Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC ...
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