Richardson RFPD has announced the availability of two 50V LDMOS RF power transistors, setting a new standard for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Dublin, Jan. 02, 2025 (GLOBE NEWSWIRE) -- The "Power Electronic Testing Market by Power Discrete (Diode, Transistor, Thyristor), Power Module, Power Integrated Circuit (IC); Electromagnetic ...
Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
DURHAM, N.C.-- (BUSINESS WIRE)-- Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for ...
NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...
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