IBM and Samsung have teased a new vertical transistor design "breakthrough" they reckon could transform the semiconductor industry and give Moore's Law a few years' more life. The companies hailed the ...
Start-up HVVi recently introduced the three-member HVVFET (high-voltage-vertical-field-effect-transistor) family of RF-transistor products. Targeting pulsed-radar and avionics applications, the ...
The HVV0405-175 high-voltage vertical field-effect transistor (HVVFET) suits radar applications in the UHF band. Operating across the 420 to 470-MHz band, it offers system designers a qualified 175-W ...
(Nanowerk News) Scientists from the Institute of Industrial Science at The University of Tokyo fabricated three-dimensional vertically formed field-effect transistors to produce high-density data ...
IBM and Samsung Electronics jointly announced a breakthrough in semiconductor design utilizing a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet, and has the ...
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