Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

An advanced gate design could reshape EV and data center power systems.

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced ...

EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

The Gallium Nitride Transistor Market has experienced substantial growth, advancing from USD 215.36 million in 2025 to USD 237.74 million in 2026, with projections to reach USD 387.63 million by 2032, ...

As military and commercial communications converge around SDR, networks demand broadband, multi-band, highly linear RF amplification that legacy technologies can no longer ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

The space-qualified GaN power transistors, driver ICs and modules of Freebird Semiconductor will now be available from EPC Space, a new company which includes Freebird and its assets, and is a ...

GaN Systems has launched the GS-065 low current (3.5A to 11A) transistor line. The product suite, developed for sub-1kW power applications, is targeted for consumer level power supply products such as ...